The diamond film is grown on the horizontal power diodes as their heat sink 將金剛石薄膜應(yīng)用于功率二極管(橫向)的熱沉。
Therefore , it is essential to develop novel material switching power diodes 因此,采用新材料開(kāi)發(fā)具有良好性能的功率二極管越來(lái)越重要。
High - efficient coupling technology is the key technology of the high power diode - pumped solid state laser systems 大口徑激光二極管陣列的高效泵浦耦合技術(shù)是高功率二極管泵浦固體激光系統(tǒng)急需解決的關(guān)鍵技術(shù)之一。
Influence of low power diode laser irradiation on the minimal inhibitory concentration of drug resistant staphylococus aureus and pseudomonas aeruginosa 低功率半導(dǎo)體激光照射后耐藥金黃色葡萄球菌與銅綠假單胞菌的耐藥性變化
We have researched the theory and experiment on q - switch lasers based on high power diode end - pumped nd : yag crystal to suit the requirement of photoelectric resisting 我們針對(duì)光電對(duì)抗的應(yīng)用要求對(duì)大功率ld泵浦的調(diào)qnd : yag激光器進(jìn)行了相當(dāng)深入的研究。
In the region of materials processing with high power diode laser array , people should couple the beam from diode laser with optical fibers in high efficiency 本課題的目的是:通過(guò)大功率半導(dǎo)體激光器與光纖的雙向耦合,建立新型相干耦合的高光束質(zhì)量大功率半導(dǎo)體激光器,以獲得高的焊接速度和良好的焊接質(zhì)量。
These improvements are achieved without resorting lifetime killing and thus the devices can be easily integrated into power ics . this paper is good for design and manufacture of p + ( sige ) - n " - n + hetero - junction power diodes 取得的成果對(duì)于p + ( sige )一n一n +異質(zhì)結(jié)功率二極管的設(shè)計(jì)和研制工作均具有一定的參考價(jià)值。
The central wavelength of 808nm , fwhm of 2 . 2nm and e - o efficiency of 45 % are achieved . most of the experimental results about high - average - power diode laser package have not been reported in previously published paper in this field 利用該冷卻器實(shí)驗(yàn)封裝出連續(xù)輸出1kw的二維陣列二極管激光器,激光中心波長(zhǎng)808nm ,譜線寬度2nm ,電光效率達(dá)45 。
High power diode laser is the requirement to research on the high - average - power diode - pumped solid - state lasers , so the package techniques of the diode laser is studied first in this thesis 高功率二極管激光器是開(kāi)展高平均功率dpl研究的必要條件。本文首先研究了高功率二極管激光器封裝技術(shù),二極管條散熱冷卻是高功率二極管激光器封裝要解決的核心問(wèn)題。
With the high frequency trend of power electronic technique development , the switching power diodes must be conducted and turn off very fast , that is , the diodes should have short reverse recovery time , low peak reverse current and soft recovery characteristics 電力電子技術(shù)高頻化的發(fā)展趨勢(shì)要求功率開(kāi)關(guān)二極管必須具有快速開(kāi)通和高速關(guān)斷的能力,即具有短的反向恢復(fù)時(shí)間( t _ ( rr ) ) ,較小的反向恢復(fù)電流( i _ ( rm ) )和軟恢復(fù)特性。